silicon epitaxial npn transistor semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8301 issue 1 page 1 of 3 2N4914 ? low collector saturation voltage. ? hermetic to3 metal package. ? designed for general purpose, switching and power amplifier applications ? screening options available absolute maximum ratings (t c = 25c unless otherwise stated) v cbo collector ? base voltage 60v v ceo collector ? emitter voltage 60v v ebo emitter ? base voltage 5v i c continuous collector current 5a i b base current 1.0a p d total power dissipation at t c = 25c 87.5w derate above 25c 0.5w/c t j junction temperature range -65 to +200c t stg storage temperature range -65 to +200c thermal properties symbols parameters min. typ. max. units r jc thermal resistance, junction to case 2 c/w
silicon epitaxial npn transistor 2N4914 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8301 issue 1 page 2 of 3 electrical characteristics (t c = 25c unless otherwise stated) symbols parameters test conditions min. typ max. units v (br)ceo (1) collector-emitter breakdown voltage i c = 10ma 60 v v ce = 60v v be = -1.5v 1.0 i cev collector cut-off current t c = 150c 2 i ceo collector cut-off current v ce = 60v i b = 0 1.0 i cbo collector cut-off current v cb = 60v i e = 0 1.0 i ebo emitter cut-off current v eb = 5v i c = 0 1.0 ma i c = 2.5a v ce = 2v 25 100 h fe (1) forward-current transfer ratio i c = 5a v ce = 2v 7 v be(on) (1) base-emitter voltage i c = 2.5a v ce = 2v 1.4 i c = 2.5a i b = 0.25a 1.0 v ce(sat) (1) collector-emitter saturation voltage i c = 5a i b = 1.0a 1.5 v dynamic characteristics i c = 500ma v ce = 10v h fe small-signal current gain f = 1.0khz 20 i c = 1.0a v ce = 10v f t transition frequency f = 1.0mhz 4 mhz notes notes notes notes (1) pulse width 300us, 2%
silicon epitaxial npn transistor 2N4914 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 8301 issue 1 page 3 of 3 mechanical data dimensions in mm (inches) to3 (to - 204aa) metal package underside view pin 1 - base pin 2 - emitter case - collector 1 2 3 (case) 25.15 (0.99)26.67 (1.05) 10.67 (0.42)11.18 (0.44) 38 . 61 ( 1 . 52 ) 39 . 12 ( 1 . 54 ) 29 . 9 ( 1 . 177 ) 30 . 4 ( 1 . 197 ) 16 . 64 ( 0 . 655 ) 17 . 15 ( 0 . 675 ) 3.84 (0.151)4.09 (0.161) 0 . 97 ( 0 . 060 ) 1 . 10 ( 0 . 043 ) 7.92 (0.312)12.70 (0.50) 22 . 23 ( 0 . 875 ) m a x . 6.35 (0.25)9.15 (0.36) 1.52 (0.06) 3.43 (0.135)
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